| PART |
Description |
Maker |
| D45C11 D45C2 D45C8 D44C5 D44C8 D45C5 D44C11 D44C1 |
POWER TRANSISTORS(4A,30-80V,30W) 功率晶体管（4A30 - 80V的，功率30W
OSC 5V 8PIN CMOS PROGRAM
POWER TRANSISTORS(4A/30-80V/30W)
TRANSISTOR|BJT|PNP|80VV(BR)CEO|4AI(C)|TO-220AB
POWER TRANSISTORS(4A30-80V30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| AP1043 AP1044 AP1141 AP1057 AP1103 AP1137 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-111
Power inductor, 10/20% tol, SMT, RoHS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 5A条一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-5
|
Electronic Theatre Controls, Inc.
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| 2SB1474 |
Power Transistor ( 80V/4A)
Power Transistor (−80V, −4A)
Power Transistor (-80V, -4A)
|
ROHM[Rohm]
|
| HUFA75542P3 HUFA75542S3S HUFA75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|63AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
|
Intersil, Corp.
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB1260R 2SB1260Q 2SB1241Q 2SB1181P |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SIP 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|园区
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252AA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|52AA
|
Rohm Co., Ltd.
|
| 2SCR544P5 |
NPN 80V 2.5A Medium Power Transistor
|
ROHM
|
| 2SC3359S |
Power Transistor (80V, 0.3A) 功率晶体管（80V的，0.3A
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| D44VH10 D44VH-D D45VH D45VH10 |
Power 15A 80V NPN
Complementary Silicon Power Transistors
Power 15A 80V PNP
|
ON Semiconductor
|
| 2SB1548A 2SB1548 0249 2SB1548PQ 2SB1548APQ 2SB1548 |
2SB1548. 2SB1548A - PNP Transistor
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-220AB
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
From old datasheet system
Power Transistors
|
Matsshita / Panasonic
|
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